Theory of Giant Magnetoresistance and Tunneling ...

由 H Sun 著作 · 2023 — Our calculations demonstrate that this magnetic tunnel junction can exhibit a giant tunneling magnetoresistance of up to 10^9}-% and remains ...

由 L Guibin 著作 · 2023 · 被引用 8 次 — Abstract Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile ...

Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ...

Tunnel magnetoresistance (TMR) is an extension of spin-valve GMR, in which the electrons travel with their spins oriented perpendicularly to the layers ...

由 L Šmejkal 著作 · 2022 · 被引用 138 次 — Giant and tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices.

Giant magnetoresistance and tunneling magnetoresistance arise when a magnetic field reorients the magnetization in different regions of a specimen causing a ...

由 Z Cui 著作 · 2022 · 被引用 2 次 — Giant tunneling magnetoresistance in two-dimensional magnetic tunnel junctions based on double transition metal MXene ScCr2C2F ... This article is licensed under ...

由 Z Wang 著作 · 2018 · 被引用 596 次 — Here we report magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to ...

Giant magne- toresistance (GMR) and tunneling magnetoresistance (TMR) sensors, while maintaining these advantages, have demonstrated better performance figures.

由 T Song 著作 · 2018 · 被引用 1051 次 — We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer ...